{"id":1686,"date":"2021-05-24T14:01:45","date_gmt":"2021-05-24T05:01:45","guid":{"rendered":"https:\/\/www.elec.ryukoku.ac.jp\/?p=1686"},"modified":"2021-05-24T14:01:45","modified_gmt":"2021-05-24T05:01:45","slug":"%e6%9c%a8%e6%9d%91%e7%9d%a6%e7%a0%94%e7%a9%b6%e5%ae%a4%e3%81%ae%e5%a4%a7%e5%ad%a6%e9%99%a2%e4%bf%ae%e4%ba%86%e7%94%9f%e3%81%ae%e8%ab%96%e6%96%87%e3%81%8c%e5%87%ba%e7%89%88%e3%81%95%e3%82%8c%e3%81%be","status":"publish","type":"post","link":"https:\/\/www.elec.ryukoku.ac.jp\/?p=1686","title":{"rendered":"\u6728\u6751\u7766\u7814\u7a76\u5ba4\u306e\u5927\u5b66\u9662\u4fee\u4e86\u751f\u306e\u8ad6\u6587\u304c\u51fa\u7248\u3055\u308c\u307e\u3057\u305f"},"content":{"rendered":"\n<p>\u6728\u6751\u7766\u7814\u7a76\u5ba4\u306e\u5927\u5b66\u9662\u4fee\u4e86\u751f\u306e\u67f4\u5c71\u53cb\u8f1d\u304f\u3093\u304c\u7b46\u982d\u8457\u8005\u306e\u8ad6\u6587\u304c\u3001\u5f53\u8a72\u5206\u91ce\u306e\u6700\u9ad8\u5cf0\u306e\u901f\u5831\u8ad6\u6587\u8a8c IEEE Electron Devices Letters \uff08\u30a4\u30f3\u30d1\u30af\u30c8\u30d5\u30a1\u30af\u30bf4.221\uff09\u3067\u51fa\u7248\u3055\u308c\u307e\u3057\u305f\u30025\u67089\u65e5\u306e\u6295\u7a3f\u304b\u3089\u305f\u3063\u305f2\u9031\u9593\u3067\u306e\u63b2\u8f09\u306f\u3001\u8ab0\u3082\u304c\u7591\u3044\u306a\u3044\u6210\u679c\u304c\u5f97\u3089\u308c\u3066\u3044\u308b\u3053\u3068\u3092\u793a\u3057\u3066\u3044\u308b\u3068\u8003\u3048\u3089\u308c\u307e\u3059\u3002<\/p>\n<p>Y. Shibayama\u00a0<em>et al<\/em>., &#8220;Amorphous-Metal-Oxide-Semiconductor Thin-Film Planar-type Spike-Timing-Dependent-Plasticity Synapse Device,&#8221; in\u00a0<em>IEEE Electron Device Letters<\/em>, doi: <a href=\"https:\/\/ieeexplore.ieee.org\/document\/9437200\" target=\"_blank\" rel=\"noopener\">10.1109\/LED.2021.3082083<\/a>.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>\u6728\u6751\u7766\u7814\u7a76\u5ba4\u306e\u5927\u5b66\u9662\u4fee\u4e86\u751f\u306e\u67f4\u5c71\u53cb\u8f1d\u304f\u3093\u304c\u7b46\u982d\u8457\u8005\u306e\u8ad6\u6587\u304c\u3001\u5f53\u8a72\u5206\u91ce\u306e\u6700\u9ad8\u5cf0\u306e\u901f\u5831\u8ad6\u6587\u8a8c IEEE Electron Devices Letters \uff08\u30a4\u30f3\u30d1\u30af\u30c8\u30d5\u30a1\u30af\u30bf4.221\uff09\u3067\u51fa\u7248\u3055\u308c\u307e\u3057\u305f\u30025\u67089\u65e5\u306e\u6295\u7a3f\u304b\u3089\u305f&#8230;<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_themeisle_gutenberg_block_has_review":false,"footnotes":""},"categories":[30],"tags":[],"_links":{"self":[{"href":"https:\/\/www.elec.ryukoku.ac.jp\/index.php?rest_route=\/wp\/v2\/posts\/1686"}],"collection":[{"href":"https:\/\/www.elec.ryukoku.ac.jp\/index.php?rest_route=\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.elec.ryukoku.ac.jp\/index.php?rest_route=\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.elec.ryukoku.ac.jp\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.elec.ryukoku.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=1686"}],"version-history":[{"count":1,"href":"https:\/\/www.elec.ryukoku.ac.jp\/index.php?rest_route=\/wp\/v2\/posts\/1686\/revisions"}],"predecessor-version":[{"id":1687,"href":"https:\/\/www.elec.ryukoku.ac.jp\/index.php?rest_route=\/wp\/v2\/posts\/1686\/revisions\/1687"}],"wp:attachment":[{"href":"https:\/\/www.elec.ryukoku.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=1686"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.elec.ryukoku.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fcategories&post=1686"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.elec.ryukoku.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Ftags&post=1686"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}